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crwdns2933797:0Brittany McCriglercrwdnd2933797:0crwdne2933797:0
crwdns2936043:0crwdne2936043:0 crwdns2933505:0crwdne2933505:0 Brittany McCrigler
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| [* black] A6 general structure cross-section. | |
| [* black] The vertical structures are the contacts between layers. | |
| [* black] The raised mesa-looking shapes between the contacts are actually the transistors' structures. | |
| [* red] This very thin line confirms that this is the 32nm HKMG (Hi-K metal gate) process. | |
| [* black] 32 HKmg process is the same as used in Apple TV (APL2498 on Chipworks). | |
| + | [* black] In a FET (Field Effect Transistor) K is a physical parameter of the device, that depends on the doping levels of the silicon, and the size of the transistor. The gate is the control pin on a FET. |