crwdns2933423:0crwdne2933423:0

crwdns2933803:012crwdne2933803:0

crwdns2933797:0Miroslav Djuriccrwdnd2933797:0crwdne2933797:0

crwdns2936043:0crwdne2936043:0 crwdns2933505:0crwdne2933505:0 Miroslav Djuric

crwdns2933769:0crwdne2933769:0
crwdns2933771:0crwdne2933771:0
crwdns2933801:0crwdne2933801:0

crwdns2933807:0crwdne2933807:0

[* black] The raised mesa-looking shapes in the cross-section view are the transistors' structures, and the little pegs running between them are the actually the contacts between layers.
[* black] We can't help but think that the transistor layout looks a lot like a Roman [http://upload.wikimedia.org/wikipedia/commons/thumb/d/d8/Pont_du_Gard_Oct_2007.jpg/300px-Pont_du_Gard_Oct_2007.jpg|aqueduct].
-[* red] This very thin line confirms that this is a 32 nm HKMG process.
+[* red] This very thin line confirms that this is a 32 nm HKMG (Hi-K metal gate) process.
[* black] The A6's 32 HKMG process is the same as the one utilized in the [guide|8293|Apple TV 3rd Generation|stepid=33185] (APL2498 on Chipworks).
[* black] In an [http://en.wikipedia.org/wiki/FET|FET (Field Effect Transistor)], K is a physical parameter of the device that depends on the doping levels of the silicon and the size of the transistor. The gate is the control pin on an FET.