crwdns2933803:012crwdne2933803:0
crwdns2933797:0David Hodsoncrwdnd2933797:0crwdne2933797:0
crwdns2936043:0crwdne2936043:0 crwdns2933505:0crwdne2933505:0 David Hodson
- crwdns2933769:0crwdne2933769:0
- crwdns2933771:0crwdne2933771:0
- crwdns2933801:0crwdne2933801:0
crwdns2933807:0crwdne2933807:0
| - | [title] A6 General Structure Cross-Section |
|---|---|
| - | [* black] The vertical structures seen in the cross-section of the A6 are the contacts between layers. |
| + | [* black] The vertical structures seen in these cross-sections of the A6 are the contacts between layers. |
| [* black] The raised mesa-looking shapes between the contacts are actually the transistors' structures. | |
| [* red] This very thin line confirms that this is the 32nm HKMG (Hi-K metal gate) process. | |
| [* black] The A6's 32 HKmg process is the same as used in Apple TV (APL2498 on Chipworks). | |
| [* black] In a [http://en.wikipedia.org/wiki/FET|FET (Field Effect Transistor)], K is a physical parameter of the device that depends on the doping levels of the silicon and the size of the transistor. The gate is the control pin on an FET. |