crwdns2936039:0Apple A6 Teardowncrwdnd2936039:012crwdne2936039:0

crwdns2933803:012crwdne2933803:0

crwdns2933797:0Jake Devincenzicrwdnd2933797:0Ndz 21, 2012crwdne2933797:0

crwdns2936043:0crwdne2936043:0 crwdns2933505:0crwdne2933505:0 Jake Devincenzi

	[* black] A6 general structure cross-section.
	[* black] The vertical structures are the contacts between layers.
	[* black] The raised mesa-looking shapes between the contacts are actually the transistors' structures.
	[* red] This very thin line confirms that this is the 32nm HKMG (Hi-K metal gate) process.
	[* black] 32 HKmg process is the same as used in Apple TV (APL2498 on Chipworks).
-	[* black] In a FET (Field Effect Transistor) K is a physical parameter of the device, that depends on the doping levels of the silicon, and the size of the transistor. The gate is the control pin on a FET.
+	[* black] In a [http://en.wikipedia.org/wiki/FET\|FET (Field Effect Transistor)], K is a physical parameter of the device that depends on the doping levels of the silicon and the size of the transistor. The gate is the control pin on an FET.